Os mais importantes transístores para uso em áudio vintage by AUDIOLIST
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Transístores mais comuns em áudio: características e encapsulamentos
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Transístores Para Áudio - 2009
Descrição: Transístores mais comuns em áudio: características e encapsulamentos
Categoria: Componentes eletrônicos :: Tipo: Tabela
Data: Sáb 20 Jun 09 10:43 :: Visitas 10217
Palavras-chave: transistor, eletrônica, componentes eletrônicos
Os mais importantes transístores para uso em áudio: amplificadores de potência, pré-amplificadores de linha e microfone, etc.
Suas características e encapsulamento.
Também estão aqui, detalhes sobre transístores obsoletos, de Germânio, para restauradores e colecionadores de equipamento antigo.
Modelo | Tipo | Fabricante | Vce ou | Ic ou | Ft ou | Pd | Outras informações | | | Vds max | Id max | ton | | | | | (V) | (A) | | (W) | ------------------------------------------------------------------------------------------------------- MJE15028 NPN ON Semi. 120 8 30 MHz 50 hfe 20 - 40 MJE15029 PNP ON Semi. 120 8 30 MHz 50 hfe 20 - 40 MJE15030 NPN ON Semi. 150 8 30 MHz 50 hfe 20 - 40 MJE15031 PNP ON Semi. 150 8 30 MHz 50 hfe 20 - 40 MJE15032 NPN ON Semi. 250 8 30 MHz 50 hfe 20 - 40 MJE15033 PNP ON Semi. 250 8 30 MHz 50 hfe 20 - 40 MJL3281A NPN ON Semi. 200 15 30 MHz 200 hfe 60 - 175 MJL1302A PNP ON Semi. 200 15 30 MHz 200 hfe 60 - 175 MJL21193 PNP ON Semi. 250 16 4 MHz 200 hfe 25 MJL21194 NPN ON Semi. 250 16 4 MHz 200 hfe 25 MJL21195 PNP ON Semi. 250 16 4 MHz 200 hfe 25 MJL21196 NPN ON Semi. 250 16 4 MHz 200 hfe 25 MJ15003 NPN ON Semi. 140 20 2 MHz 250 hfe 25 MJ15004 PNP ON Semi. 140 20 2 MHz 250 hfe 25 MJ15022 NPN ON Semi. 200 15 4 MHz 250 hfe 15 MJ15023 PNP ON Semi. 200 15 4 MHz 250 hfe 15 MJ15024 NPN ON Semi. 250 15 4 MHz 250 hfe 15 MJ15025 PNP ON Semi. 250 15 4 MHz 250 hfe 15 2SA1837 PNP Toshiba 230 1 70 MHz 20 hfe 100 - 320 2SC4793 NPN Toshiba 230 1 70 MHz 20 hfe 100 - 320 2SA1930 PNP Toshiba 180 2 200 MHz 20 hfe 100 - 320 2SA5171 NPN Toshiba 180 2 200 MHz 20 hfe 100 - 320 2SA1986 PNP Toshiba 230 15 30 MHz 150 hfe 55 - 160 2SC5358 NPN Toshiba 230 15 30 MHz 150 hfe 55 - 160 2SA1987 PNP Toshiba 230 15 30 MHz 180 hfe 55 - 160 2SC5359 NPN Toshiba 230 15 30 MHz 180 hfe 55 - 160 2SA1302 PNP Toshiba 200 15 25 MHz 150 hfe 55 - 160 2SC3281 NPN Toshiba 200 15 25 MHz 150 hfe 55 - 160 2SC3264 NPN Sanken 230 17 60 MHz 150 2SA1295 PNP Sanken 160 17 60 MHz 230 2SC2921 NPN Sanken 160 15 50 MHz 150 2SA1215 PNP Sanken 160 15 50 MHz 150 2SC2922 NPN Sanken 180 17 50 MHz 200 2SA1216 PNP Sanken 180 17 50 MHz 200 2SC2774 PNP Sanken 200 17 20 MHz 200 2SA1170 NPN Sanken 200 17 20 MHz 200 2SK213 NMOS Toshiba 140 0.5 20/30 ns 30 2SK214 NMOS Toshiba 160 0.5 20/30 ns 30 2SK215 NMOS Toshiba 180 0.5 20/30 ns 30 2SK216 NMOS Toshiba 200 0.5 20/30 ns 30 2SJ76 PMOS Toshiba 140 0.5 20/30 ns 30 2SJ77 PMOS Toshiba 160 0.5 20/30 ns 30 2SJ78 PMOS Toshiba 180 0.5 20/30 ns 30 2SJ79 PMOS Toshiba 200 0.5 20/30 ns 30 2SK1058 NMOS Toshiba 80 7 200 ns 100 cin 600 pF 2SJ162 PMOS Toshiba 80 7 200 ns 100 cin 900 pF 2SK135 NMOS Toshiba 160 7 - 100 ron 1.7 | cin 600 pF 2SJ50 PMOS Toshiba 160 7 - 100 ron 1.7 | cin 900 pF 2SK1529 NMOS Toshiba 180 10 - 120 Vds(off) 0.8 - 2.8 v | cin = 1500 pF 2SJ200 PMOS Toshiba 180 10 - 120 Vds(off) 0.8 - 2.8 v | cin = 1500 pF 2SK1530 NMOS Toshiba 200 12 - 150 Vds(off) 0.8 - 2.8 v | cin = 1700 pF 2SJ201 PMOS Toshiba 200 12 - 150 Vds(off) 0.8 - 2.8 v | cin = 1700 pF 2SK405 NMOS 160 8 - 100 classe A 2SJ115 PMOS 160 8 - 100 classe A GT20D101 IGBT Toshiba 250 20 - 180 cin = 1400pF GT20D201 IGBT Toshiba 250 20 - 180 cin = 1450pF IRF522 NMOS IRF 100 4 80 ns 40 ron 0.4 IRF9532 PMOS IRF 100 6 100 ns 75 ron 0.4 IRF240 NMOS IRF 200 18 - 125 ron 0.18 IRF9240 PMOS IRF 200 11 - 125 ron 0.4 ------------------------------------------------------------------------------------------------------- Modelo | Tipo | Fabricante | Vce ou | Ic ou | Ft ou | Pd | Outras informações | | | Vds max | Id max | ton | | | | | (V) | (A) | | (W) | |
Termos Núm. O número (identificação) do componente Case Encapsulamento (sub categorias não inclusas) Pol Polaridade - N = NPN P = PNP Mat Material - G = Germânio S = Silício Vce Tensão de ruptura - Coletor / Emissor Vcb Tensão de ruptura - Coletor / Base IC Corrente de coletor (em miliampéres) Vces Tensão de saturação (transistor em corte sob a corrente IC especificada) (em Volts) Hfe Ganho de corrente (mínimo e máximo sob corrente IC especificada) FT Frequência de Transição - a frequência onde o ganho cai a 1 (em megahertz) Ptot Potência total de dissipação (em milliwatts sob 25ºC) Aplicação Uso sugerido: SS Pequenos sinais HF alta frequência HC Alta corrente GP Uso geral Sw Comutação O/P Saída VHF Very High Frequency Transistores Bipolares Número | Case | Pol/ | Vce | Vcb | IC | Vces | sob IC | Hfe | Hfe | sob IC | FT | sob IC | Ptot |Aplicação | | Mat | | | | | (mA) | min | max | (mA) | MHz | (mA) | (mW) | ----------------------------------------------------------------------------------------------------------------------- AC107 GT3 NPN/Ge 15 15 10 - - 30 160 3 2 3 80 Audio Baixo ruído AC125 TO-1 PNP/Ge 12 32 100 - - 100 100 2 1.3 10 216 Driver AC126 TO-1 PNP/Ge 12 32 100 - - 140 140 2 1.7 10 216 Driver AC127 TO-1 NPN/Ge 12 32 500 - - 105 105 300 1 10 340 O/P AC128 TO-1 PNP/Ge 16 32 1000 0.6 1000 60 175 300 1 10 260 O/P AC132 TO-1 PNP/Ge 12 32 200 0.35 200 115 115 50 1.3 10 216 O/P AC187 TO-1 NPN/Ge 15 25 2000 0.8 1000 100 500 300 1 10 800 O/P AC188 TO-1 PNP/Ge 15 25 2000 0.6 1000 100 500 300 1 10 220 O/P AD149 TO-3 PNP/Ge 30 50 3500 0.7 3000 30 100 1000 0.3 200 32000 GP O/P AD161 PT1 NPN/Ge 20 32 3000 0.6 1000 80 320 500 0.02 300 4000 Audio amp AD162 PT1 PNP/Ge 20 32 3000 0.4 1000 80 320 500 0.02 300 6000 Audio amp AF114 TO-7 PNP/Ge 15 32 10 0 0 150 150 1 75 1 75 HF amp AF115 TO-7 PNP/Ge 15 32 10 0 0 150 150 1 75 1 75 HF amp AF116 TO-7 PNP/Ge 15 32 10 0 0 150 150 1 75 1 75 HF amp AF117 TO-7 PNP/Ge 15 32 10 0 0 150 150 1 75 1 75 HF amp AF118 TO-7 PNP/Ge 20 70 30 5 30 35 35 1000 175 10 375 VHF amp ASZ15 TO-3 PNP/Ge 60 100 10000 0.4 10000 20 55 1000 0.2 1000 30000 HC sw ASZ16 TO-3 PNP/Ge 32 60 10000 0.4 10000 45 130 1000 0.25 1000 30000 HC sw ASZ17 TO-3 PNP/Ge 32 60 10000 0.4 10000 25 75 1000 0.22 1000 30000 HC sw ASZ18 TO-3 PNP/Ge 32 100 10000 0.4 10000 30 110 1000 0.22 1000 30000 HC sw Número | Case | Pol/ | Vce | Vcb | IC | Vces | sob IC | Hfe | Hfe | sob IC | FT | sob IC | Ptot |Aplicação | | Mat | | | | | (mA) | min | max | (mA) | MHz | (mA) | (mW) | BC107 TO-18 NPN/Si 45 50 100 0.2 100 110 450 2 300 10 300 SS amp BC108 TO-18 NPN/Si 20 30 100 0.2 100 110 800 2 300 10 300 SS amp BC109 TO-18 NPN/Si 20 30 100 0.2 100 200 800 2 300 10 300 Low Noise s.s. amp BC109C TO-18 NPN/Si 20 30 100 0.2 100 420 800 2 300 10 300 Low noise high gain BC157 SOT-25 PNP/Si 45 50 100 0.25 100 75 260 2 150 10 300 SS amp BC158 SOT-25 PNP/Si 25 30 100 0.25 100 75 500 2 150 10 300 SS amp BC159 SOT-25 PNP/Si 20 25 100 0.25 100 125 500 2 150 10 300 SS amp BC177 TO-18 PNP/Si 45 50 100 0.25 100 75 260 2 150 10 300 SS amp BC178 TO-18 PNP/Si 25 30 100 0.25 100 75 500 2 150 10 300 SS amp BC179 TO-18 PNP/Si 20 25 100 0.25 100 125 500 2 150 10 300 SS amp BC182L TO-92 NPN/Si 50 10 200 0.25 10 100 480 2 150 10 300 SS amp BC183L TO-92 NPN/Si 30 45 200 0.25 10 100 850 2 150 10 300 SS amp BC184L TO-92 NPN/Si 30 45 200 0.25 10 250 850 2 150 10 300 Low noise high gain BC186 TO-18 PNP/Si 25 40 200 0.5 50 40 200 2 50 50 300 GP amp BC207 TO-106 NPN/Si 45 50 200 0.25 10 110 220 2 150 10 300 SS amp BC208 TO-106 NPN/Si 20 25 200 0.25 10 110 800 2 150 10 300 SS amp BC209 TO-106 NPN/Si 20 25 200 0.25 10 200 800 2 150 10 300 Low noise high gain BC212L TO-92 PNP/Si 50 60 200 0.25 10 60 300 2 200 10 300 SS amp BC213L TO-92 PNP/Si 30 45 200 0.25 10 80 400 2 200 10 300 SS amp BC214L TO-92 PNP/Si 30 45 200 0.25 10 80 400 2 200 10 300 SS amp BC327 TO-92 PNP/Si 45 0 1000 0.7 500 100 600 100 100 10 800 O/P BC337 TO-92 NPN/Si 45 0 1000 0.7 500 100 600 100 200 10 800 O/P BC547 SO7-30 NPN/Si 45 50 100 0.6 100 110 800 2 300 10 500 SS amp BC548 SO7-30 NPN/Si 30 30 100 0.6 100 110 800 2 300 10 500 SS amp BC549 SO7-30 NPN/Si 30 30 100 0.6 100 200 800 2 300 10 500 Low noise s. sig BC549C SO7-30 NPN/Si 30 30 100 0.6 100 420 800 2 300 10 500 Low noise high gain BC635 TO-92 NPN/Si 45 45 1000 0.5 500 40 250 150 130 500 1000 Audio O/P BC636 TO-92 PNP/Si 45 45 1000 0.5 500 40 250 150 130 500 1000 Audio O/P BC639 TO-92 NPN/Si 80 100 1000 0.5 500 40 160 150 130 0 1000 Audio O/P BC640 TO-92 PNP/Si 80 100 1000 0.5 500 40 160 150 130 0 1000 Audio O/P BCY70 TO-18 PNP/Si 40 50 200 0.5 50 50 50 10 250 50 350 GP BCY71 TO-18 PNP/Si 45 45 200 0.5 50 100 600 10 200 50 350 GP BCY72 TO-18 PNP/Si 25 25 200 0.5 50 50 50 10 200 50 350 GP Número | Case | Pol/ | Vce | Vcb | IC | Vces | sob IC | Hfe | Hfe | sob IC | FT | sob IC | Ptot |Aplicação | | Mat | | | | | (mA) | min | max | (mA) | MHz | (mA) | (mW) | BD137 TO-12G NPN/Si 60 60 1000 0.5 500 40 160 150 250 500 8000 GP O/P BD138 TO-126 PNP/Si 60 60 1000 0.5 500 40 160 150 75 500 8000 GP O/P BD139 TO-126 NPN/Si 60 100 1000 0.5 500 40 160 150 250 500 8000 GP O/P BD140 TO-126 PNP/Si 80 100 1000 0.5 500 40 160 150 75 500 8000 GP O/P BD262 TO-126 PNP/Si 60 60 4000 2.5 1500 750 750 1500 7 1500 36000 High gain darl. O/P BD263 TO-126 NPN/Si 60 80 4000 2.5 1500 750 750 1500 7 1500 36000 High gain darl. O/P BD266A TO-220 PNP/Si 80 80 8000 2 3000 750 750 3000 7 0 60000 High gain darl. O/P BD267A TO-220 NPN/Si 80 100 8000 2 3000 750 750 3000 7 0 60000 High gain darl. O/P BDX64A TO-3 PNP/Si 80 80 12000 2.5 5000 1000 1000 8000 7 5000 117W Darl. O/P BDX65A TO-3 NPN/Si 80 80 12000 2.5 5000 1000 1000 8000 7 5000 117W Darl. O/P BDY20 TO-3 NPN/Si 60 100 15000 1.1 4000 20 70 4000 1 4000 115W Power O/P Número | Case | Pol/ | Vce | Vcb | IC | Vces | sob IC | Hfe | Hfe | sob IC | FT | sob IC | Ptot |Aplicação | | Mat | | | (mA)| | (mA) | min | max | (mA) | MHz | (mA) | (mW) | BF115 TO-72 NPN/Si 30 50 30 0 0 45 165 1 230 1 145 VHF amp BF167 TO-72 NPN/Si 30 40 25 0 0 26 26 4 350 4 130 TV IF amp BF173 TO-72 NPN/Si 25 40 25 0 0 37 37 7 550 5 230 TV IF amp BF177 TO-39 NPN/Si 60 100 50 0 0 20 20 15 120 10 795 TV video amp BF178 TO-39 NPN/Si 115 185 50 0 0 20 20 30 120 10 1700 TV video amp BF179 TO-39 NPN/Si 115 250 50 0 0 20 20 20 120 10 1700 TV video amp BF180 TO-72 NPN/Si 20 30 20 0 0 13 13 2 675 2 150 UHF amp BF184 TO-72 NPN/Si 20 30 30 0 0 75 750 1 300 1 145 HF amp BF185 TO-72 NPN/Si 20 30 30 0 0 34 140 1 220 1 145 HF amp BF194 SOT25 NPN/Si 20 30 30 0 0 65 220 1 260 1 250 HF amp BF195 SOT25 NPN/Si 20 30 30 0 0 35 125 1 200 1 250 HF amp BF200 TO-72 NPN/Si 20 30 20 0 0 15 15 3 650 3 150 VHF amp BF336 TO-39 NPN/Si 180 180 100 0 0 20 60 30 130 0 3000 Video amp BF337 TO-39 NPN/Si 200 300 100 0 0 20 60 30 130 0 3000 Video amp BF338 TO-39 NPN/Si 225 250 100 0 0 20 60 30 130 0 3000 Video amp BFY50 TO-39 NPN/Si 35 80 1000 2 150 30 30 150 60 50 2860 GP BFY51 TO-39 NPN/Si 30 60 1000 0.35 150 40 40 150 50 50 2860 GP BFY52 TO-39 NPN/Si 20 40 1000 0.35 150 60 60 150 50 50 2860 GP Número | Case | Pol/ | Vce | Vcb | IC | Vces | sob IC | Hfe | Hfe | sob IC | FT | sob IC | Ptot |Aplicação | | Mat | | | (mA)| | (mA) | min | max | (mA) | MHz | (mA) | (mW) | MJ2501 TO-3 PNP/Si 80 80 10000 2 5000 1000 1000 5000 0 0 150000 O/P Darl. MJ2955 TO-3 PNP/Si0 70 15000 1.1 4000 20 70 4000 4 500 115000 O/P Alta pot. MJ3001 TO-3 NPN/Si 80 80 10000 2 5000 1000 1000 5000 0 0 150000 Darl. O/P MJE2955 90-05 PNP/Si0 70 10000 1.1 4000 20 70 4000 2 500 90000 O/P Alta pot. MJE3055 90-05 NPN/SI 60 70 10000 1.1 4000 20 70 4000 2 500 90000 O/P Alta pot. Número | Case | Pol/ | Vce | Vcb | IC | Vces | sob IC | Hfe | Hfe | sob IC | FT | sob IC | Ptot |Aplicação | | Mat | | | | | (mA) | min | max | (mA) | MHz | (mA) | (mW) | MU9610 152 NPN/Si 30 40 2000 0.4 1500 80 400 350 70 250 1000 O/P MU9611 152-01 NPN/Si 30 40 2000 0.4 1500 80 400 350 70 250 1000 O/P MU9660 152 PNP/Si0 40 2000 0.4 1500 80 400 350 70 250 1000 O/P MU9661 152-01 PNP/Si 30 40 2000 0.4 1500 80 400 350 70 250 1000 O/P NSD106 TO-202 NPN/Si 100 140 0 2.9 100 50 150 100 80 50 0 Driver-O/P NSD206 TO-202 PNP/Si 100 100 0 2.1 100 50 150 100 150 50 0 Driver-O/P Número | Case | Pol/ | Vce | Vcb | IC | Vces | sob IC | Hfe | Hfe | sob IC | FT | sob IC | Ptot |Aplicação | | Mat | | | | | (mA) | min | max | (mA) | MHz | (mA) | (mW) | OC26 TO-3 PNP/Ge 30 50 3500 0.7 3000 30 100 1000 3 500 32000 GP O/P OC28 TO-3 PNP/Ge 60 100 10000 0.4 10000 20 55 1000 2 1000 30000 HC switch OC44N TO-1 PNP/Ge 5 15 10 0 0 45 225 1 7.5 1 85 RF amp OC45 GT-3 PNP/Ge 5 15 10 0 0 25 125 1 3 3 85 RF amp OC70 GT-3 PNP/Ge 10 30 50 0 0 30 30 5 5 0 125 GP amp OC71 GT-3 PNP/Ge 10 30 50 0 0 30 75 3 6 0 125 GP amp OC72 GT-6 PNP/Ge 16 32 250 0 0 45 120 10 35 0 165 Audio O/P OC74N TO-1 PNP/Ge 10 20 300 6 300 60 150 50 1 0 550 Audio O/P OC75 GT-3 PNP/Ge 10 30 50 0 0 60 130 3 1 0 125 GP amp Número | Case | Pol/ | Vce | Vcb | IC | Vces | sob IC | Hfe | Hfe | sob IC | FT | sob IC | Ptot |Aplicação | | Mat | | | | | (mA) | min | max | (mA) | MHz | (mA) | (mW) | TIP31B TOP-66 NPN/Si 80 80 3000 1.2 3000 20 20 500 3 500 40000 Power amp - Sw TIP32B TOP-66 PNP/Si 80 80 3000 1.2 3000 20 20 500 3 500 40000 Power amp - Sw TIP2955 TOP-3 PNP/Si 70 100 15000 1.1 4000 20 20 4000 8 0 90000 Power amp - Sw TIP3055 TOP-3 NPN/Si 70 100 15000 1.1 4000 20 20 4000 8 0 90000 Power amp - Sw Número | Case | Pol/ | Vce | Vcb | IC | Vces | sob IC | Hfe | Hfe | sob IC | FT | sob IC | Ptot |Aplicação | | Mat | | | | | (mA) | min | max | (mA) | MHz | (mA) | (mW) | 2N301 TO-3 PNP/Ge 32 40 3000 0 0 50 50 1000 2 1000 11000 Audio O/P 2N706A TO-18 NPN/Si 15 25 200 0 0 20 20 10 200 0 300 High speed Sw 2N2926 TO-92 NPN/Si 25 25 100 0 0 150 150 2 100 0 200 GP 2N3053 TO-39 NPN/Si 40 60 700 1.4 150 50 250 150 100 50 2860 G.P. switch 2N3054 TO-66 NPN/Si 55 90 4000 1 200 25 25 500 8 200 25000 Audio O/P 2N3055 TO-3 NPN/Si 60 90 15000 1.1 4000 20 20 4000 8 1000 115000 O/P - Sw 2N3563 TO-106 NPN/Si 12 30 50 0 0 20 200 8 600 8 200 RF - IF amp 2N3564 TO-106 NPN/Si 15 30 100 3 20 20 500 15 400 15 200 RF - IF amp 2N3565 TO-106 NPN/Si 25 30 50 35 1 150 600 1 40 1 200 Low level amp 2N3566 TO-105 NPN/Si 30 40 200 1 100 150 600 10 40 30 300 GP amp & Sw 2N3567 TO-105 NPN/Si 40 80 500 25 150 40 120 1 60 50 300 GP amp & Sw 2N3568 TO-105 NPN/Si 60 80 500 25 150 40 120 1 60 50 300 GP amp & Sw 2N3569 TO-105 NPN/Si 40 80 500 25 150 100 300 1 60 50 300 GP amp & Sw 2N3638 TO-105 PNP/Si 25 25 500 25 50 30 30 50 100 50 300 GP amp & Sw 2N3638A TO-105 PNP/Si 25 25 500 25 50 100 100 50 150 50 300 GP amp & Sw 2N3640 TO-106 PNP/Si2 12 80 2 10 30 120 10 300 10 200 Saturated switch 2N3641 TO-105 NPN/Si 30 60 500 22 150 40 120 0 250 50 350 GP amp & Sw 2N3642 TO-105 NPN/Si 45 60 500 22 150 40 120 150 250 50 350 GP amp & Sw 2N3643 TO-105 NPN/Si 30 60 500 22 150 100 300 150 250 50 350 GP amp & Sw 2N3644 TO-105 PNP/Si 45 45 500 1 300 115 300 50 200 20 300 GP amp & Sw 2N3645 TO-105 PNP/Si 60 60 500 1 300 115 300 500 200 20 300 GP amp & Sw 2N3702 TO-92 PNP/Si 25 40 200 25 50 60 300 50 100 50 360 GP amp & Sw 2N3904 TO-92 NPN/Si 40 60 200 0 0 100 300 1 0 0 310 Low level amp 2N4250 TO-106 PNP/Si 40 40 100 25 10 250 400 1 50 0 200 Low level amp 2N4258 TO-106 PNP/Si 12 12 50 5 50 30 120 10 700 10 200 Saturated Sw 2N4292 TO-92 NPN/Si 15 30 50 6 10 20 20 3 600 4 200 Saturated Sw 2N4403 TO-92 PNP/Si0 40 600 0 0 100 300 10 0 0 310 G.P. 2N5589 MT-71C NPN/Si 18 36 600 0 0 5 5 100 175 3000 15000 H.F. mobile R.F. 2N5590 MT-72C NPN/Si 18 36 2000 0 0 5 5 250 175 10000 30000 H.F. mobile R.F. 2N5591 MT-72C NPN/Si 18 36 4000 0 0 5 5 500 175 25000 70000 H.F. mobile R.F. 2N5871 TO-3 PNP/Si 60 60 7000 1 4000 20 100 2500 4 250 100000 Power Número | Case | Pol/ | Vce | Vcb | IC | Vces | sob IC | Hfe | Hfe | sob IC | FT | sob IC | Ptot |Aplicação | | Mat | | | | | (mA) | min | max | (mA) | MHz | (mA) | (mW) | 40250 TO-66 NPN/Si 50 50 4000 1.5 1500 25 25 100 1 0 29000 Power 40408 TO-5 NPN/Si 80 0 700 1.4 150 40 200 200 100 0 1000 Power 40409 TO-39 NPN/Si 80 0 700 1.4 150 50 250 150 100 0 3000 Power 40410 TO-39 PNP/Si 80 0 700 1.4 150 50 250 150 100 0 3000 Power |
An Introduction.
Once upon a time, long ago, British and European transistors were commonly coded as valves: 0 = no heater, C = triode. However it was quickly realised that everything would end up as an OC something or other (likewise with diodes, which would all become OAxx) and could be confused with existing cold-cathode valve types. So the ProElectron organisation developed a new system of coding semiconductor devices and the one in use today. Basically, British and European transistors are issued with a unique combination of letters and numbers.
The first letter identifies the semiconductor type:
· A = Germanium
· B = Silicon
· C = Gallium Arsenide
· D = other compound semiconductor material
The second letter indicates the intended use:
· A = Small signal diode
· B = Varicap diode
· C = Small signal LF transistor
· D = LF power transistor
· E = Tunnel (Ersaki) diode
· F = RF small signal transistor
· K = Hall effect device
· L = RF power device
· N = Optocoupler
· P = Radiation sensitive device (e.g photo transistor)
· Q = Radiation emitting device (e.g LED)
· R = Low power SCR
· T = High power SCR or triac
· U = High voltage switching transistor
· Y = Rectifier diode
· Z = Zener diode
Any third letter indicates the device is primarily intended for professional and industrial use. This letter is usually a V, W, X or Y and can be ignored. Many devices have a suffix letter after the number: A = low gain, B = mid gain, C = high gain.
Devices with no suffix can have an hfe anywhere within the part's specification. Military devices are generally marked with a "CV" (Common Valve) number rather than the civilian code. For instance the CV7003 is an OC44 in uniform.
Germanium Transistors
Audio medium power types OC72 OC81D OC81 can be replaced with an AC128, a relatively high voltage, high current device. Type AC127 is the npn complementary to the AC128. Low power AF amplifier transistors like the OC71 can be replaced with the economically priced AC125. The pnp AC188 and npn AC187 are intended for use as a complementary pair in transformerless output stages. All these devices are packaged in metal TO1 cans. Please bear in mind that output transistors must be mounted on a heatsink when run at or near their maximum dissipation. If replacing /K types with their integral heatsink block, the faulty transistor can be pulled from the block and the replacement fitted in its place. Ptot for the AD149 and AD161 AD162 assume they are mounted on a suitable heatsink. Take care when replacing AD161/162, not to damage any mica insulating washers as this size (SO55) is not readily available. A thin smear of heatsink compound should be applied when mounting replacements. The gain (hfe) of germanium transistors is generally lower and far more variable than silicon devices. It is also strongly dependant on collector current and ambient temperature. The base-emitter voltage (Vbe) is also lower at 300mV compared with 600mV for silicon. For this reason you cannot generally substitute a silicon transistor for a germanium device without modifying the biasing arrangements.
The old TO7 alloy-drift transistors were specified as follows:
· AF114: RF pre-amplifier in VHF/FM front ends
· AF115: Mixer/oscillator in VHF/FM front ends.
· AF116: IF amplifier for 10.7MHz used in FM receivers.
· AF117: General purpose RF/IF amplifier in LW/MW/SW receivers.
· AF118: High voltage (75v) video amplifier for transistor TVs.
In practice, the AF125 can be used to replace AF114/115/116. There is no listed equivalent to the AF118 and where replacement is needed for an old transistor TV, it may be necessary to re-jig the circuit to take a suitably rated silicon device. Incidentally, alloy-drift transistors tend to be noisy at low frequencies and as such are not generally suitable for audio circuits. Another point to watch is that equivalent books list the AF239S as a replacement for the AF11x range. However the AF239S is a UHF device designed for use in TV UHF tuners and has a low gain (min hfe 10) compared with the AF11x types (min hfe 50) and my experience is that it won't work properly if at all in most radio circuits.
Silicon Transistors
Not even silicon devices are safe from the dead hand of obsolescence. Some familiar but early silicon transistors are unavailable, and with the continuing encroachment of cheap, disposable (and as many would describe it, nasty) surface mounted technology, leaded transistors in general seem to be under threat.
Of particular note is the Mullard "Lockfit" range. The BC147, 148 and 149 can be replaced with BC107, 108 and 109 respectively - even the lead configuration is the same.
While germanium transistors have become mainly obsolete, a small range is still being manufactured.
Fortunately most obsolete types used in radios can be replaced from this small range. For instance, the large alloy-drift 4-wire (TO-7) AF112-117 range can be replaced with OC169 or 170, which have the advantage of identical packages. Alternatively the AF125 and AF127 can be used. These are alloy-drift devices electrically similar to the AF115 and 117 respectively, but in a small TO72 metal can (4-lead TO18, same physical size as BC108). They don't suffer the collector-to-case short syndrome that afflicts the earlier types.
Transístores GEC MAZDA STC AEI HIVAC NEWMARKET TEXAS Type Vcbo Vce Ic Hfe f Pol. Case Application max max max MHz --------------------------------------------------------------------------------------- AC107 15 15 10 mA 30 2 PNP GT3 Low Noise Audio AC125 32 12 100 mA 100 1.3 PNP TO1 Audio Driver AC126 32 12 100 mA 140 1.7 PNP TO1 Audio Driver AC127 32 12 500 mA 105 1 NPN TO1 Audio O/P AC128 32 16 1 A 60 1 PNP TO1 Audio O/P AC132 32 12 200 mA 115 1.3 PNP TO1 Audio O/P AC141 50 25 1.2 A 40-110 3 NPN TO1 Audio. Medium Current AC176 32 20 300 mA 50-180 1 NPN TO1 Audio. Medium Current AC187 25 15 2 A 100 1 NPN TO1 Audio O/P AC188 25 15 2 A 100 1 PNP TO1 Audio O/P AD149 50 30 3.5 A 30 0.3 PNP TO3 GP O/P AD161 32 20 3 A 80 0.02 NPN TO3 Audio Amp AD162 32 20 3 A 80 0.02 PNP TO3 Audio Amp AF114 15 32 10 ma 150 75 PNP TO7 RF AF115 15 32 10 ma 150 75 PNP TO7 RF AF116 32 15 10 ma 150 75 PNP TO7 RF AF117 32 15 10 ma 150 75 PNP TO7 RF AF118 32 15 10 ma 150 75 PNP TO7 VHF Amp AF125 20 20 10 mA 130 75 PNP T072 RF Transístores de Germânio MULLARD Type Pe Vce Ic Hfe f Pol. Case max mW max max mA kHz --------------------------------------------------------------------------------------- OC16 6250 32 1500 45 200 PNP TO3 OC19 8000 32 1500 45 200 PNP TO3 OC22 6000 32 1000 200 20000 PNP TO3 OC23 6000 40 1000 200 25000 PNP TO3 OC24 6000 40 1000 200 25000 PNP TO3 OC26 12500 32 3500 >20 3 PNP TO3 OC28 30000 80 6000 >20 - PNP TO3 OC29 30000 60 6000 >45 250 PNP TO3 OC35 30000 60 6000 >25 250 PNP TO3 OC36 30000 80 6000 >30 250 PNP TO3 OC41 43 15 50 40 4000 PNP T01 OC42 43 15 50 80 7000 PNP T01 OC44 2O 15 5 100 15000 PNP TO1 OC45 20 10 5 50 6000 PNP TO1 OC57 10 7 5 35 10 PNP Collector Red. Then clockwise E B OC58 10 7 5 55 10 PNP Collector Red. Then clockwise E B OC59 10 7 5 80 10 PNP Collector Red. Then clockwise E B OC60 10 7 5 - 10 PNP Collector Red. Then clockwise E B OC65 25 5 10 20-40 - PNP TO1 OC66 25 15 10 30-80 - PNP TO1 OC70 50 20 10 20-40 - PNP TO1 OC71 50 20 10 30-75 - PNP TO1 OC72 100 32 125 70 350 PNP TO1 OC75 75 30 10 90 900 PNP TO1 OC76 75 32 125 >15 - PNP TO1 OC77 75 60 125 45 - PNP TO1 OC81 160 32 500 50-250 1 PNP TO1 OC81D 160 32 20 >25 1 PNP TO1 OC83 160 32 500 90 850 PNP TO1 OC139 20 20 250 45 3500 NPN Base Center. C = Red Switching OC140 60 20 200 >50 4500 NPN Base Center. C = Red Switching OC170 50 20 10 100 70000 PNP TO1 OC171 50 20 10 100 70000 PNP TO1 |
